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CNT as Interconnects

CNT as Interconnects
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Author(s): Karmjit Singh Sandha (Thapar Institute of Engineering and Technology, Patiala, India)
Copyright: 2020
Pages: 30
Source title: Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET)
Source Author(s)/Editor(s): Balwinder Raj (National Institute of Technical Teachers Training and Research, Chandigarh, India), Mamta Khosla (Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India) and Amandeep Singh (National Institute of Technology, Srinagar, India)
DOI: 10.4018/978-1-7998-1393-4.ch007

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Abstract

The chapter will start with brief introduction to the interconnects and its importance in an integrated circuit at deep sub-micron technology nodes. The brief discussion about the concept of scaling, interconnects models, and material in use are presented. The limitations of conventional materials at scaled down technology nodes will be discussed next. The focus of the chapter is to present the electrical equivalent circuit model to estimate the impedance parameters of SWCNT bundle and MWCNT bundle as interconnects at different nano-scaled technology nodes for global level interconnect length. Using ESC model of SWCNT, MWCNT, and copper, the performance comparative analysis for delay and power delay product (PDP) will be presented for different interconnect lengths at nano-scaled technology nodes. Finally, the chapter summary and conclusion will be written at the end of the chapter.

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