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CNTFETs: Introduction and Types

CNTFETs: Introduction and Types
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Author(s): Amandeep Singh (National Institute of Technology, Srinagar, India), Mamta Khosla (Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India) and Balwinder Raj (National Institute of Technical Teachers Training and Research, Chandigarh, India)
Copyright: 2020
Pages: 14
Source title: Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET)
Source Author(s)/Editor(s): Balwinder Raj (National Institute of Technical Teachers Training and Research, Chandigarh, India), Mamta Khosla (Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India) and Amandeep Singh (National Institute of Technology, Srinagar, India)
DOI: 10.4018/978-1-7998-1393-4.ch001

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Abstract

In recent years, carbon nanotube (CNT) emerged as one of the promising materials that shows various advantages over silicon material (e.g., aggressive channel length scaling due to absence of mobility degradation, variable bandgap with single material, ultra-thin body device that is possible due to smaller diameter [1-3nm], and compatibility of CNT with high-k materials resulting in high ION). Moreover, CNTs show both metallic and semiconducting properties; hence, by using metallic CNTs, interconnects can be realized to fabricate a circuit purely consisting of CNTs. This chapter will provide introduction to carbon nanotubes field effect transistor (CNTFETs) starting from material properties of carbon nanotubes and followed by how it can be used as semiconductor channel in field effect transistor (MOSFET) to form CNTFET. The different types of CNTFETs will be discussed based on the type of CNT used along with their advantages and disadvantages.

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