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III-V Nitride Based Novel Solid-State Terahertz Power-Source: Application in Defense and Industry
Abstract
The static and dynamic characteristics of Wide Bandgap GaN having different structures and doping profiles are thoroughly investigated. The study has established the potential of this WBG semiconductor in fabricating high-power IMPATT devices in the above high frequency regimes. A comparison between the device performances of WZ- & ZB- GaN IMPATTs has shown that WZ-GaN IMPATTs are superior to ZB-GaN IMPATTs as far as output power density, efficiency, and high-temperature operation are concerned. Starting with brief review on state-of-the-art THz devices and on the conventional ATT devices, a details analysis of THz frequency performances of the novel III-V Nitride semiconductor based ATT devices will be presented in this chapter. Application possibilities of such devices in defence and industrial sectors will be presented in a nutshell. Emphasis will be given on the studies on their experimental realization. Photo-sensitivity studies of the new class of devices are also the scope the chapter.
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