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Strain Broadening of X-Ray Diffraction Peaks
Abstract
The line shape caused by lattice distortions in a crystal is reviewed. It is revealed that the broadening of a diffraction peak with indices hkl is related to the mean-square-strain perpendicular to the reflecting (hkl) lattice planes. The strain broadening of line profiles depends on the order of diffraction. The line profiles for a crystal in which the lattice distortions are caused by dislocations are described in detail in this chapter. It is revealed that the anisotropic strain field of dislocations yields a special dependence of peak broadening on indices of reflection. The stronger the screening of the strain fields of dislocations, the longer the tails in the diffraction profiles. For polarized dislocation walls, the diffraction peak is asymmetric, and the antisymmetric component of the profile is determined by the dislocation polarization. It is shown that the strains in nanoparticles resulted by the relaxation of their surfaces also lead to line broadening.
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